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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3355 DESCRIPTION *Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz *High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS *Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature 0.1 A PC 0.6 W TJ 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3355 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1.0 A IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1.0 A hFE DC Current Gain IC= 20mA ; VCE= 10V 50 300 fT Current-Gain--Bandwidth Product IC= 20mA ; VCE= 10V 6.5 GHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.65 1.0 pF S21e2 Insertion Power Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 9.5 dB NF Noise Figure IC= 7mA ; VCE= 10V;f= 1.0GHz 1.1 dB NF Noise Figure IC= 40mA ; VCE= 10V;f= 1.0GHz 1.8 3.0 dB hFE Classification Class Marking hFE K K 50-300 isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3355 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3355 S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.173 0.054 0.013 0.028 0.062 0.091 0.121 0.148 0.171 0.207 S11 -80.3 -77.0 -57.9 81.8 82.2 80.7 80.2 80.1 80.0 79.9 S21 13.652 7.217 4.936 3.761 3.094 2.728 2.321 2.183 1.892 1.814 S21 103.4 85.1 74.0 62.3 58.3 52.9 44.9 36.4 30.2 21.4 S12 0.041 0.066 0.113 0.144 0.183 0.215 0.240 0.288 0.305 0.344 S12 73.8 71.2 69.3 67.0 64.7 61.7 58.7 50.7 46.8 39.1 S22 0.453 0.427 0.428 0.414 0.392 0.377 0.359 0.354 0.345 0.344 S22 -21.8 -26.0 -30.8 -37.2 -43.2 -51.4 -58.3 -67.2 -80.0 -90.4 isc Websitewww.iscsemi.cn 4 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor VCE = 10 V, IC = 40 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 2SC3355 S11 0.011 0.028 0.027 0.043 0.074 0.098 0.120 0.146 0.171 0.205 S11 -60.1 -42.9 25.1 65.7 75.1 75.6 74.1 75.8 77.2 78.0 S21 13.76 7.338 4.996 3.801 3.134 2.759 2.351 2.203 1.910 1.825 S21 105.4 82.9 72.7 61.9 57.6 52.4 44.4 36.0 29.9 21.3 S12 0.040 0.069 0.114 0.144 0.183 0.221 0.247 0.291 0.299 0.344 S12 -73.3 66.7 69.4 67.8 63.4 62.1 55.7 49.6 46.0 39.4 S22 0.421 0.416 0.414 0.406 0.386 0.373 0.356 0.347 0.342 0.335 S22 -17.5 -22.8 -28.7 -35.7 -41.8 -49.8 -56.3 -66.6 -78.8 -89.6 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor S-PARAMETER S11e, S22e-FREQUENCY CONDITION VCE = 10 V 2SC3355 S21e-FREQUENCY CONDITION VCE = 10 V IC = 40 mA S12e-FREQUENCY CONDITION VCE = 10 V IC = 40 mA isc Websitewww.iscsemi.cn 6 |
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